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PD-97301
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number IRHLNJ77034 IRHLNJ73034 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.035 0.035 ID 22A* 22A*
2N7606U3 IRHLNJ77034 60V, N-CHANNEL
TECHNOLOGY
SMD-0.5
International Rectifier's R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25C ID @VGS = 4.5V,TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 22* 20 88 57 0.45 10 63 22 5.7 8.8 -55 to 150 300 (for 5s) 1.0 (Typical)
Pre-Irradiation
Units
A W
W/C
V mJ A mJ V/ns C g
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05/06/08
IRHLNJ77034, 2N7606U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- 1.0 -- 24 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.068 -- -- -4.9 -- -- -- -- -- -- -- -- -- -- -- -- 4.0 2015 488 4.5 1.18 -- -- 0.035 2.0 -- -- 1.0 10 100 -100 34 8.0 12 26 7.0 54 19 -- -- -- -- V V/C V mV/C S A nA
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 20A A VDS = VGS, ID = 250A V DS = 10V, IDS = 20A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 22A VDS = 30V VDD = 30V, ID = 22A, VGS = 5.0V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
nC
ns
nH
pF
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 22* 88 1.2 286 704
Test Conditions
A
V ns nC Tj = 25C, IS = 22A, VGS = 0V A Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V A
ton Forward Turn-On Time * Current is limited by package
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC Junction-to-Case
Min Typ Max Units
-- -- 2.2
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHLNJ77034, 2N7606U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Resistance (SMD-0.5) Diode Forward Voltage Upto 300K Rads (Si)1
Min
60 1.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 250A VGS = VDS , ID = 250A VGS = 10V VGS = -10V VDS = 48V, VGS=0V VGS = 4.5V, ID = 20A VGS = 4.5V, ID = 20A V GS = 0V, ID = 22A
-- 2.0 100 -100 1.0 0.03 0.035 1.2
1. Part numbers IRHLNJ77034, IRHLNJ73034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm )) Kr Xe Au 37.3 63.3 90
2
Energy
(MeV) 400 435 1480
Range
(m) 48.6 38.4 80.4 0V 60 60 60 -1V 60 60 -2V 60 60 -3V 60 60 -
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-4V 60 60 -
-5V 60 -
-7V 60 -
-8V 35 -
70 60 50 40 30 20 10 0 0 -1 -2 -3 -4 VGS -5 -6 -7 -8
Kr Xe Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
3
IRHLNJ77034, 2N7606U3
Pre-Irradiation
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.30V
100
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.30V TOP
10 2.3V
2.30V 1 0.1 60s PULSE WIDTH, Tj = 25C 1 10 100
60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100 T J = 150C
ID, Drain-to-Source Current (A)
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 22A
1.5
10
1.0
T J = 25C 1
0.5
0.1 2 2.5 3
VDS = 25V 15 60s PULSE WIDTH 3.5 4 4.5 5
VGS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHLNJ77034, 2N7606U3
RDS(on), Drain-to -Source On Resistance (m)
90 80 70 60 50 40 30 20 10 0 2 4 6 8
ID = 22A
RDS(on), Drain-to -Source On Resistance ( m)
100
100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Vgs = 4.5V T J = 25C TJ = 150C
TJ = 150C
T J = 25C 10 12
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
90
2.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.0
80
1.5
1.0
70
0.5
ID = 50A ID = 250A ID = 1.0mA ID = 150mA
60 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
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IRHLNJ77034, 2N7606U3
Pre-Irradiation
4000 3600 3200
C oss = C ds + C gd
C, Capacitance (pF)
2800 2400 2000 1600 1200 800 400 0 1 10 100
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
12 ID = 22A 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 QG, Total Gate Charge (nC) VDS = 48V VDS = 30V VDS = 12V
Ciss Coss
Crss
FOR TEST CIRCUIT SEE FIGURE 17
VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100 T J = 150C
35 LIMITED BY PACKAGE 30
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
10
T J = 25C
25 20 15 10 5 0
1
0.1 VGS = 0V
0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V)
25
50
75
100
125
150
T C , Case Temperature (C)
Fig 11. Typical Source-to-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
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Pre-Irradiation
IRHLNJ77034, 2N7606U3
1000
EAS , Single Pulse Avalanche Energy (mJ)
120
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 100
100
80
ID 9.8A 13.9A BOTTOM 22A TOP
10
100s 1ms
60
40
1 Tc = 25C Tj = 150C Single Pulse 1 10 VDS , Drain-to-Source Voltage (V) 10ms
20
0.1
100
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1
P DM t1 t2
0.1
0.01 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHLNJ77034, 2N7606U3
Pre-Irradiation
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
VGS 20V
. D.U.T
IAS tp
+ - VDD
A
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
Fig 16a. Unclamped Inductive Test Circuit
4.5V
QG
12V
50K .2F .3F
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
Fig 17a. Basic Gate Charge Waveform VDS VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
IG
ID
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
VDS 90%
RD
D.U.T.
VDD
+
-
10% VGS
td(on) tr t d(off) tf
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLNJ77034, 2N7606U3
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.26mH Peak IL = 22A, VGS = 10V A ISD 22A, di/dt 328A/s, VDD 60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
10 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 05/2008
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